IRF6616 Series
Manufacturer: INFINEON
IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 5 MOHM;
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | Surface Mount | -40 °C | 150 °C | DIRECTFET™ MX | DirectFET™ Isometric MX | 40 V | N-Channel | 4.5 V 10 V | 2.25 V | 2.8 W 89 W | 44 nC | 3765 pF | 20 V | 5 mOhm | 19 A 106 A | MOSFET (Metal Oxide) |
INFINEON | Surface Mount | -40 °C | 150 °C | DIRECTFET™ MX | DirectFET™ Isometric MX | 40 V | N-Channel | 4.5 V 10 V | 2.25 V | 2.8 W 89 W | 44 nC | 3765 pF | 20 V | 5 mOhm | 19 A 106 A | MOSFET (Metal Oxide) |