BUK9V13-40H Series

Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)

Catalog

Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Grade	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	FET Feature	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Configuration	Rds On (Max) @ Id, Vgs	Power - Max	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Nexperia USA Inc. BUK9V13-40HX	42 A	40 V	Automotive	8-LFPAK56 SOT-1205	2.2 V	Surface Mount	Logic Level Gate	AEC-Q101	175 °C	-55 °C	MOSFET (Metal Oxide)	2 N-Channel	13.6 mOhm	46 W	LFPAK56D	19.4 nC	1160 pF

Catalog

Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)

Description

Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101.