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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Supplier Device Package | Power Dissipation (Max) | Package / Case | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) [Max] | Mounting Type | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | DFN0603-3 (SOT8013) | 4.7 W 300 mW | 0603 Metric | 0201 | 2.1 nC | MOSFET (Metal Oxide) | 1 V | 1.8 V | 4.5 V | 124 pF | 150 °C | -55 °C | 900 mA | 850 mOhm | 8 V | Surface Mount | 30 V | P-Channel |