SI4973 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2P-CH 30V 5.8A 8SOIC
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Configuration | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | FET Feature | Power - Max [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 23 mOhm | Surface Mount | 56 nC | 2 P-Channel | MOSFET (Metal Oxide) | -55 °C | 150 °C | 3 V | Logic Level Gate | 1.1 W | 8-SOIC | 30 V |