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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Qualification | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Mounting Type | Grade | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 56 mOhm | N-Channel | MOSFET (Metal Oxide) | 4 A | 150 °C | -55 °C | AEC-Q101 | 2.7 V | 60 V | 20 V | 1.65 W | 435 pF | 6-UDFN Exposed Pad | Surface Mount | Automotive | 4.5 V 10 V | DFN2020MD-6 | 12 nC |