Catalog
NPN Epitaxial Silicon Transistor
Key Features
• Low Collector-Emitter Saturation Voltage: VCE(sat) = 1 V (Max.) @ 8 A
• Fast Switching Speeds
• Complement to KSE45H
• General Purpose Power Switching
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NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Operating Temperature | Frequency - Transition | Mounting Type | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | Current - Collector Cutoff (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | TO-220-3 | 1 V | 60 | 150 °C | 50 MHz | Through Hole | NPN | 80 V | TO-220-3 | 10 µA |