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150 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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150 V, P-channel Trench MOSFET
150 V, P-channel Trench MOSFET
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1.7 W 16.2 W | 23 nC | 20 V | 1 A 3.2 A | Surface Mount | 6 V 10 V | P-Channel | MOSFET (Metal Oxide) | 150 °C | -55 °C | MLPAK33 | 700 mOhm | 8-PowerVDFN | 4 V | 150 V |