CSD16322Q5 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type
Texas Instruments CSD16322Q5	8 V	3 V	N-Channel	21 A 97 A	1365 pF	25 V	9.7 nC	10 V	-8 V	1.4 V	3.1 W	-55 °C	150 °C	MOSFET (Metal Oxide)	8-VSON-CLIP (5x6)	5 mOhm	8-PowerTDFN	Surface Mount

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Key Features

• Optimized for 5 V Gate DriveUltralow Q g and Q gdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageOptimized for 5 V Gate DriveUltralow Q g and Q gdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.