IPA65R Series

Manufacturer: INFINEON

Catalog

TRANS MOSFET N-CH 650V 17.5A 3-PIN(3+TAB) TO-220FP TUBE

Part	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
INFINEON IPA65R190CFDXKSA2	150 °C	-55 °C	1850 pF	650 V	17.5 A	34 W	TO-220-3 Full Pack	20 V	4.5 V	68 nC	N-Channel	10 V	Through Hole	190 mOhm	PG-TO220-FP	MOSFET (Metal Oxide)
INFINEON IPA65R110CFDXKSA2	150 °C	-55 °C		650 V	31.2 A	34.7 W	TO-220-3 Full Pack	20 V	4.5 V		N-Channel	10 V	Through Hole		PG-TO220-FP	MOSFET (Metal Oxide)	3240 pF	118 nC	110 mOhm
INFINEON IPA65R190CFDXKSA1	150 °C	-55 °C	1850 pF	650 V	17.5 A	34 W	TO-220-3 Full Pack	20 V	4.5 V	68 nC	N-Channel	10 V	Through Hole	190 mOhm	PG-TO220-3-111	MOSFET (Metal Oxide)
INFINEON IPA65R600C6XKSA1	150 °C	-55 °C	440 pF	650 V	7.3 A	28 W	TO-220-3 Full Pack	20 V	3.5 V	23 nC	N-Channel	10 V	Through Hole		PG-TO220-3-111	MOSFET (Metal Oxide)			600 mOhm
INFINEON IPA65R190E6XKSA1	150 °C	-55 °C		650 V	20.2 A	34 W	TO-220-3 Full Pack	20 V	3.5 V	73 nC	N-Channel	10 V	Through Hole	190 mOhm	PG-TO220-3-111	MOSFET (Metal Oxide)	1620 pF
INFINEON IPA65R125C7XKSA1	150 °C	-55 °C		650 V	10 A	32 W	TO-220-3 Full Pack	20 V	4 V		N-Channel	10 V	Through Hole		PG-TO220-FP	MOSFET (Metal Oxide)	1670 pF	35 nC	125 mOhm
INFINEON IPA65R110CFDXKSA1	150 °C	-55 °C		650 V	31.2 A	34.7 W	TO-220-3 Full Pack	20 V	4.5 V		N-Channel	10 V	Through Hole		PG-TO220-3-111	MOSFET (Metal Oxide)	3240 pF	118 nC	110 mOhm