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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Supplier Device Package | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 60 mOhm | 900 mV | 3.6 A | 4.63 W 490 mW | 12 nC | Surface Mount | TO-236AB | SC-59 SOT-23-3 TO-236-3 | 1.5 V 4.5 V | 744 pF | 20 V | 150 °C | -55 °C | 12 V | P-Channel | MOSFET (Metal Oxide) |