IPI90R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 900V 5.7A TO262-3

Part	Supplier Device Package	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPI90R1K0C3XKSA1	PG-TO262-3	MOSFET (Metal Oxide)	N-Channel	10 V	20 V	850 pF	3.5 V	34 nC	Through Hole	900 V	I2PAK TO-262-3 Long Leads TO-262AA	1 Ohm	5.7 A	150 °C	-55 °C
INFINEON IPI90R800C3XKSA1	PG-TO262-3	MOSFET (Metal Oxide)	N-Channel	10 V	20 V	1100 pF	3.5 V	42 nC	Through Hole	900 V	I2PAK TO-262-3 Long Leads TO-262AA	800 mOhm	6.9 A	150 °C	-55 °C	104 W
INFINEON IPI90R340C3XKSA1	PG-TO262-3	MOSFET (Metal Oxide)	N-Channel	10 V	20 V		3.5 V		Through Hole	900 V	I2PAK TO-262-3 Long Leads TO-262AA	340 mOhm	15 A	150 °C	-55 °C		208 W	94 nC	2400 pF
INFINEON IPI90R1K2C3XKSA1	PG-TO262-3	MOSFET (Metal Oxide)	N-Channel	10 V	20 V	710 pF	3.5 V		Through Hole	900 V	I2PAK TO-262-3 Long Leads TO-262AA	1.2 Ohm	5.1 A	150 °C	-55 °C	83 W		28 nC