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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | FET Type | Mounting Type | Qualification | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Grade | Package / Case | Vgs (Max) | Technology | Power Dissipation (Max) | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 9 pF | TO-236AB | N-Channel | Surface Mount | AEC-Q101 | 3 Ohm | 30 V | 250 mA | 315 pC | Automotive | SC-59 SOT-23-3 TO-236-3 | 20 V | MOSFET (Metal Oxide) | 1.6 W | 320 mW | 175 °C | -55 °C | 1.5 V | 2.5 V 10 V |