BUK6Q21-30P Series
Manufacturer: Nexperia USA Inc.
Catalog
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BUK6Q21-30P/SOT8002/MLPAK33
| Part | Grade | Mounting Type | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Qualification | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | Surface Mount Wettable Flank | 20 V | 175 °C | -55 °C | AEC-Q101 | MOSFET (Metal Oxide) | 30 V | 4.5 V 10 V | 2.7 V | 34 nC | 21.5 mOhm | 1300 pF | 56 W | P-Channel | 41 A | 8-PowerVDFN | MLPAK33 |