SI2324 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 100V 2.3A SOT-23
| Part | Power Dissipation (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.25 W 2.5 W | SOT-23-3 (TO-236) | 190 pF | N-Channel | MOSFET (Metal Oxide) | 4.5 V 10 V | -55 °C | 150 °C | Surface Mount | 100 V | 234 mOhm | 10.4 nC | 2.8 V | SC-59 SOT-23-3 TO-236-3 | 1.6 A 2.3 A | 20 V |