KSC815 Series

Catalog

NPN EPITAXIAL SILICON TRANSISTOR

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Power - Max [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor KSC815YTA	120 hFE	400 mV	150 °C	400 mW	200 MHz	100 nA	TO-92-3	TO-226-3 TO-92-3	200 mA	45 V	Through Hole	NPN
ON Semiconductor KSC815YBU	120 hFE	400 mV	150 °C	400 mW	200 MHz	100 nA	TO-92-3	TO-226-3 TO-92-3	200 mA	45 V	Through Hole	NPN
ON Semiconductor KSC815OTA		400 mV	150 °C	400 mW	200 MHz	100 nA	TO-92-3	TO-226-3 TO-92-3	200 mA	45 V	Through Hole	NPN	70