IR2117 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HIGH-SIDE 8SOIC

Part	Gate Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Package / Case	Package / Case	Input Type	Logic Voltage - VIL, VIH	Number of Drivers	Channel Type	Supplier Device Package
INFINEON IR2117STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	250 mA	500 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	6 V 9.5 V	1	Single	8-SOIC
INFINEON IR2117PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	250 mA	500 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns		8-DIP (0.300" 7.62mm)		Non-Inverting	6 V 9.5 V	1	Single	8-PDIP
INFINEON IR2117	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	250 mA	500 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns		8-DIP (0.300" 7.62mm)		Non-Inverting	6 V 9.5 V	1	Single	8-PDIP
INFINEON 98-0065	IGBT MOSFET (N-Channel)	20 V	10 VDC	Surface Mount	250 mA	500 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	6 V 9.5 V	1	Single	8-SOIC
INFINEON IR2117SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	250 mA	500 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	6 V 9.5 V	1	Single	8-SOIC
INFINEON IR2117PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	250 mA	500 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns		8-DIP (0.300" 7.62mm)		Non-Inverting	6 V 9.5 V	1	Single	8-PDIP
INFINEON IR2117STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	250 mA	500 mA	High-Side	600 V	-40 °C	150 °C	40 ns	80 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	6 V 9.5 V	1	Single	8-SOIC