IPI70N Series

Manufacturer: INFINEON

Catalog

MOSFET N-CHANNEL_100+

Part	Grade	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Qualification	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPI70N12S311AKSA1	Automotive	MOSFET (Metal Oxide)	70 A	120 V	11.6 mOhm	125 W	Through Hole	4355 pF	N-Channel	4 V	20 V	AEC-Q101	I2PAK TO-262-3 Long Leads TO-262AA	10 V	65 nC	175 °C	-55 °C
INFINEON IPI70N10S312AKSA1	Automotive	MOSFET (Metal Oxide)	70 A	100 V	11.6 mOhm	125 W	Through Hole	4355 pF	N-Channel	4 V	20 V	AEC-Q101	I2PAK TO-262-3 Long Leads TO-262AA	10 V	66 nC	175 °C	-55 °C	PG-TO262-3
INFINEON IPI70N04S307AKSA1	Automotive	MOSFET (Metal Oxide)		40 V		79 W	Through Hole		N-Channel	4 V	20 V	AEC-Q101	I2PAK TO-262-3 Long Leads TO-262AA	10 V	40 nC	175 °C	-55 °C	PG-TO262-3	6.5 mOhm
INFINEON IPI70N10S3L12AKSA1	Automotive	MOSFET (Metal Oxide)	70 A	100 V	12.1 mOhm	125 W	Through Hole		N-Channel	2.4 V	20 V	AEC-Q101	I2PAK TO-262-3 Long Leads TO-262AA	4.5 V 10 V	80 nC	175 °C	-55 °C	PG-TO262-3		5550 pF
INFINEON IPI70N12S3L12AKSA1	Automotive	MOSFET (Metal Oxide)	70 A	120 V	12.1 mOhm	125 W	Through Hole		N-Channel	2.4 V	20 V	AEC-Q101	I2PAK TO-262-3 Long Leads TO-262AA	4.5 V 10 V	77 nC	175 °C	-55 °C			5550 pF