SI4436 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 60V 8A 8SO
| Part | Power Dissipation (Max) | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | FET Type | Mounting Type | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.5 W 5 W | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | N-Channel | Surface Mount | 2.5 V | MOSFET (Metal Oxide) | 60 V | -55 °C | 150 °C | 4.5 V 10 V | 32 nC | 36 mOhm | 8 A | 20 V | 1100 pF |