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12 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
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12 V, N-channel Trench MOSFET
12 V, N-channel Trench MOSFET
| Part | Technology | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs(th) (Max) @ Id | FET Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 1.2 W 31 W | 12 V | 3-XDFN | DSN1010-3 | 1.8 V | 4.5 V | 900 mV | N-Channel | 12 nC | 150 °C | -55 °C | 11 A | 8 V | Surface Mount | 16 mOhm | 855 pF |