S4PG Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 4A TO277A
| Part | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Speed | Speed | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Qualification | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Grade | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2.5 µs | 30 pF | Standard Recovery >500ns | 200 mA | Surface Mount | 400 V | 3-PowerDFN TO-277 | 4 A | 10 µA | AEC-Q101 | Standard | 150 °C | -55 °C | Automotive | TO-277A (SMPC) | 1.1 V |
Vishay General Semiconductor - Diodes Division | 2.5 µs | 30 pF | Standard Recovery >500ns | 200 mA | Surface Mount | 400 V | 3-PowerDFN TO-277 | 4 A | 10 µA | AEC-Q101 | Standard | 150 °C | -55 °C | Automotive | TO-277A (SMPC) | 1.1 V |
Vishay General Semiconductor - Diodes Division | 2.5 µs | 30 pF | Standard Recovery >500ns | 200 mA | Surface Mount | 400 V | 3-PowerDFN TO-277 | 4 A | 10 µA | AEC-Q101 | Standard | 150 °C | -55 °C | Automotive | TO-277A (SMPC) | 1.1 V |