TLP291(SE Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

ISOLATORS AND SOLID STATE RELAYS FOR ENHANCED SAFETY AND EFFICIENCY | TOSHIBA, PHOTOCOUPLER (PHOTOTRANSISTOR OUTPUT), DC INPUT, 3750 VRMS, SO4

Part	Input Type	Current Transfer Ratio (Min)	Turn On / Turn Off Time (Typ)	Supplier Device Package	Vce Saturation (Max) [Max]	Rise / Fall Time (Typ)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case	Output Type	Number of Channels [custom]	Current - DC Forward (If) (Max) [Max]	Current - Output / Channel [custom]	Current Transfer Ratio (Max) [Max]	Mounting Type	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Current Transfer Ratio (Min) [Min]	Current Transfer Ratio (Max)
Toshiba Semiconductor and Storage TLP291(BL-TP,SE	DC	200 %	3 µs	4-SO	300 mV	2 µs 3 µs	-55 C	110 °C	0.179 in 4.55 mm	4-SOIC	Transistor	1	50 mA	50 mA	600 %	Surface Mount	3750 Vrms	1.25 V
Toshiba Semiconductor and Storage TLP291(GB-TP,SE	DC		3 µs	4-SO	300 mV	2 µs 3 µs	-55 C	110 °C	0.179 in 4.55 mm	4-SOIC	Transistor	1	50 mA	50 mA	600 %	Surface Mount	3750 Vrms	1.25 V	100 %
Toshiba Semiconductor and Storage TLP291(TP,SE	DC	50 %	3 µs	4-SO	300 mV	2 µs 3 µs	-55 C	110 °C	0.179 in 4.55 mm	4-SOIC	Transistor	1	50 mA	50 mA	600 %	Surface Mount	3750 Vrms	1.25 V
Toshiba Semiconductor and Storage TLP291(GRH-TP,SE	DC	150 %	3 µs	4-SO	300 mV	2 µs 3 µs	-55 C	110 °C	0.179 in 4.55 mm	4-SOIC	Transistor	1	50 mA	50 mA	300 %	Surface Mount	3750 Vrms	1.25 V
Toshiba Semiconductor and Storage TLP291(GRL-TP,SE	DC		3 µs	4-SO	300 mV	2 µs 3 µs	-55 C	110 °C	0.179 in 4.55 mm	4-SOIC	Transistor	1	50 mA	50 mA	200 %	Surface Mount	3750 Vrms	1.25 V	100 %
Toshiba Semiconductor and Storage TLP291(BLL-TP,SE	DC	200 %	3 µs	4-SO	300 mV	2 µs 3 µs	-55 C	110 °C	0.179 in 4.55 mm	4-SOIC	Transistor	1	50 mA	50 mA		Surface Mount	3750 Vrms	1.25 V		400 %
Toshiba Semiconductor and Storage TLP291(V4GRTP,SE	DC		3 µs	4-SO	300 mV	2 µs 3 µs	-55 C	110 °C	0.179 in 4.55 mm	4-SOIC	Transistor	1	50 mA	50 mA	300 %	Surface Mount	3750 Vrms	1.25 V	100 %
Toshiba Semiconductor and Storage TLP291(YH-TP,SE	DC		3 µs	4-SO	300 mV	2 µs 3 µs	-55 C	110 °C	0.179 in 4.55 mm	4-SOIC	Transistor	1	50 mA	50 mA		Surface Mount	3750 Vrms	1.25 V	75 %	150 %
Toshiba Semiconductor and Storage TLP291(Y-TP,SE	DC	50 %	3 µs	4-SO	300 mV	2 µs 3 µs	-55 C	110 °C	0.179 in 4.55 mm	4-SOIC	Transistor	1	50 mA	50 mA		Surface Mount	3750 Vrms	1.25 V		150 %
Toshiba Semiconductor and Storage TLP291(V4GBTP,SE	DC		3 µs	4-SO	300 mV	2 µs 3 µs	-55 C	110 °C	0.179 in 4.55 mm	4-SOIC	Transistor	1	50 mA	50 mA	600 %	Surface Mount	3750 Vrms	1.25 V	100 %