PSMN2R0-40YLB Series

N-channel 40 V, 2.1 mOhm, 180 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Catalog

N-channel 40 V, 2.1 mOhm, 180 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Part	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Feature	Rds On (Max) @ Id, Vgs	Technology
Nexperia USA Inc. PSMN2R0-40YLBX	40 V	N-Channel	87 nC	Surface Mount	175 °C	-55 °C	SC-100 SOT-669	4.5 V 10 V	LFPAK56 Power-SO8	20 V	180 A	2.05 V	6416 pF	166 W	Schottky Diode (Body)	2.1 mOhm	MOSFET (Metal Oxide)

Catalog

N-channel 40 V, 2.1 mOhm, 180 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Description

180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.