BUK9Y7R2-60E Series

N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56

Catalog

N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56

Part	Vgs(th) (Max) @ Id	Grade	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Qualification	Vgs (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Power Dissipation (Max)	Supplier Device Package	Package / Case
Nexperia USA Inc. BUK9Y7R2-60E,115	2.1 V	Automotive	60 V	Surface Mount	35 nC	100 A	5 V	5.6 mOhm	AEC-Q101	10 V	MOSFET (Metal Oxide)	175 °C	-55 °C	N-Channel	167 W	LFPAK56 Power-SO8	SC-100 SOT-669

Catalog

N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56

Description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.