Catalog
40 V, 6 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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40 V, 6 A PNP high power bipolar transistor
40 V, 6 A PNP high power bipolar transistor
| Part | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | Power - Max [Max] | Supplier Device Package | Transistor Type | Package / Case | Mounting Type | Qualification | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] | Operating Temperature | Grade | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 540 mV | 110 MHz | 1.35 W | LFPAK56 Power-SO8 | PNP | SC-100 SOT-669 | Surface Mount | AEC-Q100 | 210 | 100 nA | 175 °C | Automotive | 40 V |