SQP50 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 60V 50A TO220AB
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Grade | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Qualification | FET Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 136 W | 9 mOhm | MOSFET (Metal Oxide) | -55 °C | 175 ░C | Automotive | 3065 pF | TO-220AB | 60 V | Through Hole | 50 A | 20 V | AEC-Q101 | N-Channel | 2.5 V | 72 nC | 4.5 V 10 V | TO-220-3 |