IR2110 Series

Manufacturer: INFINEON

Catalog

THE IR2110S IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (16 LEAD SOIC PACKAGE)

Part	Gate Type	Package / Case	Package / Case	Package / Case	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Operating Temperature [Min]	Operating Temperature [Max]	Driven Configuration	Input Type	Package / Case
INFINEON IR2110SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	7.5 mm	0.295 "	Surface Mount	25 ns	17 ns	500 V	16-SOIC	20 V	3.3 V	Independent	6 V 9.5 V	2 A	2 A	2	-40 °C	150 °C	Half-Bridge	Non-Inverting
INFINEON IR2110PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	14-DIP	7.62 mm	0.3 in	Through Hole	25 ns	17 ns	500 V	14-DIP	20 V	3.3 V	Independent	6 V 9.5 V	2 A	2 A	2	-40 °C	150 °C	Half-Bridge	Non-Inverting
INFINEON IR2110-2PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-DIP (0.300" 7.62mm) 14 Leads			Through Hole	25 ns	17 ns	500 V	16-PDIP	20 V	3.3 V	Independent	6 V 9.5 V	2 A	2 A	2	-40 °C	150 °C	Half-Bridge	Non-Inverting
INFINEON IR2110-1PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	13 Leads 14-DIP		7.62 mm	Through Hole	25 ns	17 ns	500 V		20 V	3.3 V	Independent	6 V 9.5 V	2 A	2 A	2	-40 °C	150 °C	Half-Bridge	Non-Inverting	0.3 in
INFINEON IR2110STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	7.5 mm	0.295 "	Surface Mount	25 ns	17 ns	500 V	16-SOIC	20 V	3.3 V	Independent	6 V 9.5 V	2 A	2 A	2	-40 °C	150 °C	Half-Bridge	Non-Inverting
INFINEON IR2110S	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	7.5 mm	0.295 "	Surface Mount	25 ns	17 ns	500 V	16-SOIC	20 V	3.3 V	Independent	6 V 9.5 V	2 A	2 A	2	-40 °C	150 °C	Half-Bridge	Non-Inverting
INFINEON IR2110	IGBT MOSFET (N-Channel) N-Channel MOSFET	14-DIP	7.62 mm	0.3 in	Through Hole	25 ns	17 ns	500 V	14-DIP	20 V	3.3 V	Independent	6 V 9.5 V	2 A	2 A	2	-40 °C	150 °C	Half-Bridge	Non-Inverting
INFINEON IR2110STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	7.5 mm	0.295 "	Surface Mount	25 ns	17 ns	500 V	16-SOIC	20 V	3.3 V	Independent	6 V 9.5 V	2 A	2 A	2	-40 °C	150 °C	Half-Bridge	Non-Inverting
INFINEON IR2110-2	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-DIP (0.300" 7.62mm) 14 Leads			Through Hole	25 ns	17 ns	500 V	16-PDIP	20 V	3.3 V	Independent	6 V 9.5 V	2 A	2 A	2	-40 °C	150 °C	Half-Bridge	Non-Inverting