LSIC1MO120G0160 Series

SiC MOSFET 1200V 160mO TO247-4L

Catalog

SiC MOSFET 1200V 160mO TO247-4L

Part	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Package / Case	Drain to Source Voltage (Vdss)
LITTELFUSE LSIC1MO120G0160	125 W	TO-247-4L	4 V	890 pF	175 °C	-55 °C	200 mOhm	Through Hole	N-Channel	50 nC	22 A	-6 V 22 V	TO-247-4	1.2 kV

Catalog

SiC MOSFET 1200V 160mO TO247-4L

Description

Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance. The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance.