SI4155 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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P-CHANNEL 30-V (D-S) MOSFET SO-8
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 50 nC | 2.5 V | 2.5 W 4.5 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | 25 V | 30 V | Surface Mount | 10.2 A 13.6 A | P-Channel | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | 1870 pF | 15 mOhm |