TK155A65Z Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.155 Ω@10V, TO-220SIS, DTMOSⅥ
| Part | Supplier Device Package | FET Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) | Mounting Type | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | TO-220SIS | N-Channel | 18 A | 155 mOhm | TO-220-3 Full Pack | 30 V | 29 nC | 10 V | 4 V | 650 V | MOSFET (Metal Oxide) | 40 W | Through Hole | 150 °C | 1635 pF |