SI5904 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 20V 3.1A 1206-8
| Part | Technology | Vgs(th) (Max) @ Id | Power - Max [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Configuration | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 1.5 V | 1.1 W | 1206-8 ChipFET™ | 75 mOhm | 20 V | Surface Mount | 3.1 A | 2 N-Channel (Dual) | 6 nC | Logic Level Gate | -55 °C | 150 °C |