G3R12M Series

Catalog

1200V 12M TO-247-4 G3R SIC MOSFE

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
GeneSiC Semiconductor G3R12MT12K	288 nC	TO-247-4	2.7 V	1.2 kV	9335 pF	157 A	15 V 18 V	175 °C	-55 °C	N-Channel	22 V	-10 V	Through Hole	TO-247-4	13 mOhm	567 W