RW1C026 Series
Manufacturer: Rohm Semiconductor
MOSFET P-CH 20V 2.5A 6WEMT
| Part | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Technology | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 20 V | 70 mOhm | 6-WEMT | 1 V | 700 mW | 6-SMD Flat Leads | 1250 pF | 10 nC | 1.5 V 4.5 V | 10 V | MOSFET (Metal Oxide) | 150 °C | 2.5 A | Surface Mount | P-Channel |