LF156 Series

Single, 40-V, 5-MHz, -55 to 125°C, FET-input operational amplifier

Catalog

Single, 40-V, 5-MHz, -55 to 125°C, FET-input operational amplifier

Part	Current - Input Bias	Slew Rate	Supplier Device Package	Voltage - Input Offset	Voltage - Supply Span (Min) [Min]	Package / Case	Mounting Type	Number of Circuits	Voltage - Supply Span (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gain Bandwidth Product	Current - Supply	Amplifier Type
Texas Instruments LF156H/NOPB	30 pA	12 V/µs	TO-99-8	3 mV	10 V	TO-99-8 Metal Can	Through Hole	1	44 V	-55 °C	125 °C	5 MHz	5 mA	J-FET
Texas Instruments LF156H	30 pA	12 V/µs	TO-99-8	3 mV	10 V	TO-99-8 Metal Can	Through Hole	1	44 V	-55 °C	125 °C	5 MHz	5 mA	J-FET

Catalog

Single, 40-V, 5-MHz, -55 to 125°C, FET-input operational amplifier

Key Features

• AdvantagesReplace Expensive Hybrid and Module FETOp AmpsRugged JFETs Allow Blow-Out Free HandlingCompared With MOSFET Input DevicesExcellent for Low Noise Applications UsingEither High or Low Source Impedance–VeryLow 1/f CornerOffset Adjust Does Not Degrade Drift orCommon-Mode Rejection as in MostMonolithic AmplifiersNew Output Stage Allows Use of LargeCapacitive Loads (5,000 pF) Without StabilityProblemsInternal Compensation and Large DifferentialInput Voltage CapabilityCommon FeaturesLow Input Bias Current: 30 pALow Input Offset Current: 3 pAHigh Input Impedance: 1012ΩLow Input Noise Current: 0.01 pA/√HzHigh Common-Mode Rejection Ratio: 100 dBLarge DC Voltage Gain: 106 dBUncommon FeaturesExtremely Fast Settling Time to 0.01%:4 µs for the LFx55 devices1.5 µs for the LFx561.5 µs for the LFx57 (AV= 5)Fast Slew Rate:5 V/µs for the LFx5512 V/µs for the LFx5650 V/µs for the LFx57 (AV= 5)Wide Gain Bandwidth:2.5 MHz for the LFx55 devices5 MHz for the LFx5620 MHz for the LFx57 (AV= 5)Low Input Noise Voltage:20 nV/√Hzfor the LFx5512 nV/√Hzfor the LFx5612 nV/√Hzfor the LFx57 (AV= 5)AdvantagesReplace Expensive Hybrid and Module FETOp AmpsRugged JFETs Allow Blow-Out Free HandlingCompared With MOSFET Input DevicesExcellent for Low Noise Applications UsingEither High or Low Source Impedance–VeryLow 1/f CornerOffset Adjust Does Not Degrade Drift orCommon-Mode Rejection as in MostMonolithic AmplifiersNew Output Stage Allows Use of LargeCapacitive Loads (5,000 pF) Without StabilityProblemsInternal Compensation and Large DifferentialInput Voltage CapabilityCommon FeaturesLow Input Bias Current: 30 pALow Input Offset Current: 3 pAHigh Input Impedance: 1012ΩLow Input Noise Current: 0.01 pA/√HzHigh Common-Mode Rejection Ratio: 100 dBLarge DC Voltage Gain: 106 dBUncommon FeaturesExtremely Fast Settling Time to 0.01%:4 µs for the LFx55 devices1.5 µs for the LFx561.5 µs for the LFx57 (AV= 5)Fast Slew Rate:5 V/µs for the LFx5512 V/µs for the LFx5650 V/µs for the LFx57 (AV= 5)Wide Gain Bandwidth:2.5 MHz for the LFx55 devices5 MHz for the LFx5620 MHz for the LFx57 (AV= 5)Low Input Noise Voltage:20 nV/√Hzfor the LFx5512 nV/√Hzfor the LFx5612 nV/√Hzfor the LFx57 (AV= 5)

Description

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner. The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.