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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Grade | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Qualification | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Package / Case | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 20 V | 4.5 V 10 V | SOT-223-3 | 708 pF | 3 A | Automotive | 60 V | MOSFET (Metal Oxide) | 150 mOhm | P-Channel | 14 nC | AEC-Q101 | Surface Mount | -55 °C | 150 °C | 1.2 W | TO-261-4 TO-261AA | 3 V |
Diodes Inc | 20 V | 4.5 V 10 V | SOT-223-3 | 708 pF | 3 A | Automotive | 60 V | MOSFET (Metal Oxide) | 150 mOhm | P-Channel | 14 nC | AEC-Q101 | Surface Mount | -55 °C | 150 °C | 1.2 W | TO-261-4 TO-261AA | 3 V |