IXFT26 Series
Manufacturer: IXYS
MOSFET N-CH 500V 26A TO268
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Technology | Power Dissipation (Max) [Max] | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | -55 °C | 150 °C | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 26 A | 4 V | 10 V | 500 V | 4200 pF | 160 nC | 20 V | MOSFET (Metal Oxide) | 300 W | N-Channel | TO-268AA | 200 mOhm | Surface Mount | |||
IXYS | -55 °C | 150 °C | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 26 A | 10 V | 600 V | 5100 pF | 20 V | MOSFET (Metal Oxide) | N-Channel | TO-268AA | 250 mOhm | Surface Mount | 200 nC | 4.5 V | 360 W | |||
IXYS | -55 °C | 150 °C | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 26 A | 10 V | 1000 V | 3290 pF | 113 nC | 30 V | MOSFET (Metal Oxide) | N-Channel | TO-268HV (IXFT) | 320 mOhm | Surface Mount | 6 V | 860 mW |