GT30J121 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
IGBTS, 600 V/30 A IGBT, TO-3P(N)
| Part | Current - Collector Pulsed (Icm) | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Mounting Type | Td (on/off) @ 25°C [custom] | Td (on/off) @ 25°C [custom] | Voltage - Collector Emitter Breakdown (Max) [Max] | Test Condition | Package / Case | Vce(on) (Max) @ Vge, Ic | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 60 A | 170 W | 30 A | TO-3P(N) | Through Hole | 90 ns | 300 ns | 600 V | 15 V 24 Ohm 30 A 300 V | SC-65-3 TO-3P-3 | 2.45 V | 1 mJ 800 µJ |