FDB267 Series
Manufacturer: ON Semiconductor
MOSFET N-CH 200V 19A TO263AB
| Part | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Package / Case | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | TO-263 (D2PAK) | N-Channel | 130 mOhm | 200 V | 10 V | 1320 pF | 175 ░C | -65 °C | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | 93 W | 4.5 V | Surface Mount | 19 A | 38 nC |