SSM6J214FE Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, -3.6 A, 0.05 Ω@10V, SOT-563(ES6)
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Technology | Drain to Source Voltage (Vdss) | Operating Temperature | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Mounting Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Vgs (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 3.6 A | 7.9 nC | MOSFET (Metal Oxide) | 30 V | 150 °C | 50 mOhm | 560 pF | P-Channel | 1.8 V 10 V | ES6 | Surface Mount | 1.2 V | 500 mW | 12 V | SOT-563 SOT-666 |