IPTG111N Series
Manufacturer: INFINEON
THE OPTIMOS™ POWER MOSFET IPTG111N20NM3FD COMES IN THE IMPROVED TO-LEADED PACKAGE WITH GULLWING LEADS.
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Package / Case | Technology | Vgs(th) (Max) @ Id | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 175 °C | -55 °C | 81 nC | PG-HSOG-8-1 | 200 V | 10 V | 3.8 W 375 W | 7000 pF | N-Channel | 8-PowerSMD Gull Wing | MOSFET (Metal Oxide) | 4 V | Surface Mount | 20 V | 10.8 A 108 A | 11.1 mOhm |