High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 1.7 Ω@10V, DPAK, π-MOSⅦ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 1.7 Ω@10V, DPAK, π-MOSⅦ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 1.7 Ω@10V, DPAK, π-MOSⅦ
| Part | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Package / Case | Vgs(th) (Max) @ Id | Mounting Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 600 V | 600 pF | 100 W | 10 V | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4.4 V | Surface Mount | 1.7 Ohm | 4 A | 150 °C | 12 nC | DPAK | 30 V |