IRS2113 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 16MLPQ
| Part | Gate Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Input Type | Logic Voltage - VIL, VIH | Supplier Device Package | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Operating Temperature [Min] | Operating Temperature [Max] | High Side Voltage - Max (Bootstrap) [Max] | Driven Configuration | Mounting Type | Package / Case | Channel Type | Number of Drivers | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Non-Inverting | 6 V 9.5 V | 16-MLPQ (4x4) | 25 ns | 17 ns | -40 °C | 150 °C | 600 V | Half-Bridge | Surface Mount | 16-VFQFN Exposed Pad 14 Leads | Independent | 2 | 2.5 A | 2.5 A | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Non-Inverting | 6 V 9.5 V | 16-MLPQ (4x4) | 25 ns | 17 ns | -40 °C | 150 °C | 600 V | Half-Bridge | Surface Mount | 16-VFQFN Exposed Pad 14 Leads | Independent | 2 | 2.5 A | 2.5 A | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Non-Inverting | 6 V 9.5 V | 16-SOIC | 25 ns | 17 ns | -40 °C | 150 °C | 600 V | Half-Bridge | Surface Mount | 16-SOIC | Independent | 2 | 2.5 A | 2.5 A | 7.5 mm | 0.295 " |