TK20J60 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 600V 20A TO3P
| Part | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Vgs (Max) | Technology | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | N-Channel | 27 nC | 10 V | Through Hole | 150 °C | 600 V | 5 V | SC-65-3 TO-3P-3 | 30 V | MOSFET (Metal Oxide) | 190 W | 20 A | TO-3P(N) | 190 mOhm | 1470 pF |