FDA70N20 Series

Power MOSFET, N-Channel, UniFETTM, 200V, 70A, 35mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, UniFETTM, 200V, 70A, 35mΩ, TO-3P

Part	Power Dissipation (Max) [Max]	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
ON Semiconductor FDA70N20	417 W	SC-65-3 TO-3P-3	5 V	3970 pF	Through Hole	30 V	-55 °C	150 °C	70 A	86 nC	N-Channel	TO-3PN	MOSFET (Metal Oxide)	10 V	200 V

Catalog

Power MOSFET, N-Channel, UniFETTM, 200V, 70A, 35mΩ, TO-3P

Key Features

• RDS(on)= 35mΩ ( Max.)@ VGS= 10V, ID= 35A

• Low gate charge ( Typ. 66nC)

• Low Crss( Typ. 89pF)

• 100% avalanche tested

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.