SIHD7 Series

Catalog

MOSFET N-CH 600V 7A DPAK

Part	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type
Vishay General Semiconductor - Diodes Division SIHD7N60E-E3	MOSFET (Metal Oxide)	4 V	10 V	680 pF	30 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	78 W	-55 °C	150 °C	7 A	TO-252AA	40 nC	600 mOhm	Surface Mount
Vishay General Semiconductor - Diodes Division SIHD7N60ET5-GE3	MOSFET (Metal Oxide)	4 V	10 V	680 pF	30 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	78 W	-55 °C	150 °C	7 A	TO-252AA	40 nC	600 mOhm	Surface Mount
Vishay General Semiconductor - Diodes Division SIHD7N60E-GE3	MOSFET (Metal Oxide)	4 V	10 V	680 pF	30 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	78 W	-55 °C	150 °C	7 A	DPAK	40 nC	600 mOhm	Surface Mount