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12 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
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12 V, P-channel Trench MOSFET
12 V, P-channel Trench MOSFET
| Part | Power Dissipation (Max) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Package / Case | Supplier Device Package [y] | Supplier Device Package [x] | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 12.5 W | 556 mW | 25 mOhm | 1400 pF | 6.2 A | Surface Mount | P-Channel | 900 mV | 8 V | 29.4 nC | 1.8 V | 4.5 V | 6-XFBGA WLCSP | 0.98 | 1.48 | 6-WLCSP | 150 °C | -55 °C | MOSFET (Metal Oxide) | 12 V |