SISS27 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 30V 50A PPAK1212-8S
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id [Max] | Package / Case | Mounting Type | Power Dissipation (Max) | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 5.1 mOhm | 2.2 V | PowerPAK® 1212-8S | Surface Mount | 57 W | MOSFET (Metal Oxide) | 20 V | 55 nC | -55 °C | 150 °C | P-Channel | 50 A | 4.5 V 10 V | PowerPAK® 1212-8S | 4660 pF | 30 V |