SIHB11 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 800V 12A D2PAK
| Part | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 179 W | 440 mOhm | Surface Mount | 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | 1670 pF | 12 A | 30 V | 4 V | MOSFET (Metal Oxide) | 800 V | -55 °C | 150 °C | TO-263 (D2PAK) | 88 nC |