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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Grade | Drive Voltage (Max Rds On, Min Rds On) | Qualification | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Technology | Mounting Type | FET Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 5.7 W 630 mW | 70 mOhm | 20 V | Automotive | 4.5 V 10 V | AEC-Q101 | TO-236AB | 175 °C | -55 °C | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 3.2 A | 100 pF | 3.3 nC | 30 V | 2.5 V |