BUK6Q26-40P Series
Manufacturer: Nexperia USA Inc.
Catalog
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BUK6Q26-40P/SOT8002/MLPAK33
| Part | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Grade | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Supplier Device Package | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 56 W | 26.6 mOhm | 40 V | 4.5 V 10 V | 2.7 V | Surface Mount Wettable Flank | 175 °C | -55 °C | MOSFET (Metal Oxide) | 34 A | 34 nC | Automotive | AEC-Q101 | 1280 pF | 20 V | MLPAK33 | P-Channel | 8-PowerVDFN |