20 V, dual N-channel Trench MOSFET
20 V, dual N-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Configuration | Mounting Type | Power - Max | Package / Case | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 0.9 nC | 1 V | 43.6 pF | 3.5 A | 930 mA | DFN1010B-6 | 150 °C | -55 °C | 20 V | 2 N-Channel (Dual) | Surface Mount | 6 W 280 mW | 6-XFDFN Exposed Pad | MOSFET (Metal Oxide) | 320 mOhm |